光收发器中光电集成接收芯片的实现  

Realization of a Monolithic Optoelectronic Integrated Receiver Chip for Optical Communication Transceiver

作　　者：芦晶[1] 程翔[1] 颜黄苹[1] 李继芳[1] 柯庆福[1] 陈朝[1] 

机构地区：[1]厦门大学物理与机电工程学院机电工程系,福建厦门361005

出　　处：《半导体技术》2010年第3期291-294,共4页Semiconductor Technology

基　　金：厦门市科技计划项目(3502Z20063002)

摘　　要：针对应用于850nm光通信中的10/100Mbit/s收发器,提出采用0.5μm标准CMOS工艺对其光接收芯片实现Si基单片集成。整体芯片面积为0.6mm2,共集成了一个双光电二极管的(DPD)光电探测器和一个跨阻前置放大电路,功耗为100mW,并给出了具体的测试性能结果。结果表明,在850nm光照下,光接收芯片带宽达到53MHz,工作速率为72Mbit/s。重点介绍了DPD光电探测器的原理和结构,并给出了相应的制造过程和电路等效模型,对整个光接收芯片进行了多种实用性测试,可以满足系统的性能要求。Monolithically integrated optical receiver was designed in 0.5 μm standard CMOS technology, used in 850 nm optical transceivers of 10/100 Mbit/s. The chip size is 0.6 mm2, integrating a double photodiode （DPD） detector and a transimpedance preamplifier. The power dissipation is 100 mW, and the result of test about OEIC was given. Test results show that the optical receiver has a bandwidth of 53 MHz and the bit rate of 72 Mbit/s in 850 nm light. The principle and structure of the DPD was introduced, the corresponding manufacturing process and circuit equivalent model were given. The OEIC meets the system performance requirements.

关 键 词：单片集成 互补型金属氧化物晶体管 双光电二极管 光接收芯片 850 nm光通信 

分 类 号：TN491[电子电信—微电子学与固体电子学]