PYZT铁电薄膜的制备及特性研究  

Study of Preparation and Characteristics of PYZT Ferroelectric Thin Films

作　　者：王培英[1] 余大年[1] 刘梅冬[1] 曾亦可[1] 饶韫华 李楚容 

机构地区：[1]华中理工大学固体电子系,武汉430074

出　　处：《功能材料》1998年第6期606-608,共3页Journal of Functional Materials

摘　　要：用sol－gel方法制备了掺Y的PZT铁电薄膜，研究了PYZT溶胶的成胶机理。探讨了Y掺入量对PYZT铁电薄膜的结构、介电、铁电、漏电流和疲劳特性的影响。Y doped PZT ferroelectric thin films were prepared by sol-gel methed. The mechanism of PYZT solwas investigated. The effect of the amount of Y doped on structure, dielectric, ferroelectric, leakage current and fatiguecharacteristics of PZT thin films was investigated.

关 键 词：SOL-GEL 掺杂 疲劳 漏电流 铁电薄膜 

分 类 号：TN384.04[电子电信—物理电子学]