高压高温合成复合氧化物半导体纳米块体材料的结构和电学性质  

Microstructure and Electrical Properties of Bulk Mn-Ni Complex Oxides Nanocrystalline Materials by High Pressure and Temperature

作　　者：王疆瑛[1] 陶明德[1] 谭辉[1] 韩英[1] 

机构地区：[1]中国科学院新疆物理所,乌鲁木齐830011

出　　处：《功能材料》1998年第6期667-668,共2页Journal of Functional Materials

摘　　要：采用高压高温合成方法制备出锰镍复合氧化物半导体纳米块体材料。用X射线衍射（XRD），高分辨电子显微镜（HTEM）表征纳米块体材料的结构。用恒压源测定室温下电流－电压曲线（零功率）。实验结果表明：纳米固体材料微观结构存在长程有序的晶粒结构与界面无序态的结构。纳米固体材料的电学特性与材料的微观结构有关。The bulk Mn-Ni complex oxides nanocrystalline materials were synthesized by high pressure (4. 5GPa)and temperature(450℃). The results of X-ray diffraction (XRD) and high resolving transmission electron microscopy(TEM) showed that microstructure of the bulk nanocrystalline materials was different from both multicrystalline andnoncrystalline. The electrical properties of the bulk nanocrystalline materials was investigated . Its I-V characteristicwas nonlinear.

关 键 词：高温高压合成 纳米块体材料 氧化物半导体 

分 类 号：TN304.21[电子电信—物理电子学]