基于三极管的CFBR-Ⅱ堆辐射损伤常数测定  

Measurement of Radiation Damage Constant about Bipolar Transistor of CFBR-Ⅱ

作　　者：邹德慧[1] 邱东[1] 

机构地区：[1]中国工程物理研究院,四川绵阳621900

出　　处：《核动力工程》2010年第1期140-142,共3页Nuclear Power Engineering

摘　　要：为获取CFBR-II堆与其他装置建立辐射损伤等效系数的实验依据,在CFBR-II堆稳态工况下开展典型三极管的辐射损伤常数测定工作。结果表明,硅三极管的辐射损伤常数在4×10-16～6×10-16 cm2之间;对于直流增益与中子注量的线性关系的适用范围,集电极注入电流可以拓展到300 mA。This paper describes the measurement of radiation damage constant of typical bipolar transistor of CFBR-Ⅱ in a steady state, in order to acquire the radiation damage equivalent coefficient between CFBR-Ⅱ and the others. The results show that the radiation damage constants of silicon bipolar transistors are between 4×10^-16～6×10^-16 cm^2, and for the range of linearity about current gain following neutron fluence, the collector current can be expanded to 300 mA.

关 键 词：CFBR-II堆 三极管 中子注量 直流增益 辐射损伤常数 

分 类 号：TN322.8[电子电信—物理电子学]