AlSb多晶薄膜的制备及其潮解性研究  

Prepare and deliquescence for AlSb polycrystalline films

作　　者：贺剑雄[1] 武莉莉[1] 郑家贵[1] 夏庚培[1,2] 冯良桓[1] 张静全[1] 李卫[1] 黎兵[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610064 [2]国家光伏产品质量监督检验中心,四川成都610200

出　　处：《功能材料》2010年第1期173-176,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2006AA05Z418)

摘　　要：采用磁控溅射法制备了Al-Sb多层薄膜,通过调节Al和Sb亚层厚度及层数改变原子配比,并在真空中退火。用X射线衍射(XRD)、扫描电子显微镜(SEM)、金相显微镜、Hall测试及俄歇电子能谱仪研究了薄膜的结构和性能。结果表明,刚沉积的薄膜只有Sb的结晶相,经500℃退火后化合为P型AlSb多晶薄膜,且沿(111)择优取向,退火温度超过600℃薄膜产生局部损伤。通过台阶仪显微摄像探头及俄歇深度剖图观察和分析了薄膜的潮解现象,提出了几种保护措施。The Al-Sb multi-layer films were prepared by magnetron sputtering method,and that samples of different atomic ratio were obtained through adjustment of Al and Sb sub-layer thickness and number,and then annealed in vaccum.The structural and electrical properties of the films before and after annealing have been studied with X-ray diffraction （XRD）,X-ray fluorescence （XRF）,scanning electron microscope （SEM）,Metallogragh,Hall effect and Auger electron spectrometer.The results showed that only the Sb peaks were observed in as-deposited films.After annealing at 500℃,the P-type AlSb ploycrystalline films were obtaied by combination of Al and Sb elements,and with （111） preferred orientation.Also,the samples occurred partial damage in excess of 600℃ annealing.The deliquescence phenomenon of films was observed and analyzed with step profiler microcamera and auger depth profilling,and gives some methods to improve.

关 键 词：ALSB 薄膜 退火 磁控溅射法 

分 类 号：TM914.4[电气工程—电力电子与电力传动]