Grain boundary layer behavior in ZnO/Si heterostructure  

作　　者：刘秉策 刘磁辉 徐军 易波 

机构地区：[1]Department of Physics,University of Science and Technology of China

出　　处：《Journal of Semiconductors》2010年第3期15-18,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.50472009,10474091,50532070).

摘　　要：The grain boundary layer behavior in ZnO/Si heterostucture is investigated. The current-voltage （I-V） curves, deep level transient spectra （DLTS） and capacitance-voltage （C-V） curves are measured. The transport currents ofZnO/Si heterojunction are dominated by grain boundary layer as high densities ofinterfacial states existed. The interesting phenomenon that the crossing of in I-V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following.The grain boundary layer behavior in ZnO/Si heterostucture is investigated. The current-voltage （I-V） curves, deep level transient spectra （DLTS） and capacitance-voltage （C-V） curves are measured. The transport currents ofZnO/Si heterojunction are dominated by grain boundary layer as high densities ofinterfacial states existed. The interesting phenomenon that the crossing of in I-V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following.

关 键 词：ZnO/Si heterostructure grain boundary layer intrinsic defects deep level 

分 类 号：O471[理学—半导体物理]