GaAs太阳电池的体电阻及旁路漏电对电池结特性的影响  

The Influence of the Bulk Resistance and Shunt Current on the Characteristics of GaAs Solar Cells

作　　者：施小忠[1] 夏冠群[1] 汪乐[1] 

机构地区：[1]中国科学院上海冶金研究所,200050

出　　处：《固体电子学研究与进展》1998年第4期392-398,共7页Research & Progress of SSE

摘　　要：复合电流是液相外延GaAs太阳电池暗电流的主要成分。扫描电镜观察表明,旁路电流主要来源于太阳电池结区的杂质。串联电阻主要来源于电池p型GaAs层的薄层电阻及正面电极的体电阻。串联电阻降低了电池的短路电流,旁路电阻降低了电池的开路电压。减小电池p-GaAs层的薄层电阻是提高电池效率的重要途径。The recombination current is the main part of the dark current of LPE GaAs solar cells. The results of SEM show that shunt resistance is due to the impurities in the junction of the solar cells. Series resistance reduces short current and shunt resistance reduces open voltage. Reducing the sheet resistance of the ptype layers of GaAs solar cells is an important way to improve the efficiency of solar cells.

关 键 词：太阳电池 结特性 体电阻 旁路漏电 砷化钾 

分 类 号：TM914.4[电气工程—电力电子与电力传动]