Design and test results of a low-noise readout integrated circuit for high-energy particle detectors  

作　　者：ZHANG Mingming CHEN Zhongjian ZHANG Yacong LU Wengao JI Lijiu 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, 100871, China

出　　处：《Nuclear Science and Techniques》2010年第1期44-48,共5页核技术（英文）

基　　金：Supported by the National Natural Science Foundation of China (No.40704025)

摘　　要：A low-noise readout integrated circuit for high-energy particle detector is presented.The noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source degeneration.Continuous-time semi-Gaussian filter is chosen to avoid switch noise.The peaking time of pulse shaper and the gain can be programmed to satisfy multi-application.The readout integrated circuit has been designed and fabricated using a 0.35 μm double-poly triple-metal CMOS technology.Test results show the functions of the readout integrated circuit are correct.The equivalent noise charge with no detector connected is 500–700 e in the typical mode,the gain is tunable within 13–130 mV/fC and the peaking time varies from 0.7 to 1.6 μs,in which the average gain is about 20.5 mV/fC,and the linearity reaches 99.2%.A low-noise readout integrated circuit for high-energy particle detector is presented. The noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source degeneration. Continuous-time semi-Gaussian filter is chosen to avoid switch noise. The peaking time of pulse shaper and the gain can be programmed to satisfy multi-application. The readout integrated circuit has been designed and fabricated using a 0.35μm double-poly triple-metal CMOS technology. Test results show the functions of the readout integrated circuit are correct. The equivalent noise charge with no detector connected is 500-700 e in the typical mode, the gain is tunable within 13 130 mV/fC and the peaking time varies from 0.7 to 1.6 μs, in which the average gain is about 20.5 mV/fC, and the linearity reaches 99.2%.

关 键 词：读出集成电路 高能粒子探测器 低噪声 设计 测试 CMOS工艺 峰值时间 单端放大器 

分 类 号：TN215[电子电信—物理电子学] TL815[核科学技术—核技术及应用]