SOI亚微米波导光栅的设计与制作  

Design and Fabrication of Silicon-on-insulator Sub-micrometer Waveguide Grating

作　　者：孙阳[1] 徐学俊[1] 屠晓光[1] 陈少武[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《半导体光电》2010年第1期27-29,共3页Semiconductor Optoelectronics

基　　金：国家"973"计划课题(2007CB613405);国家自然科学基金课题(60877013;60837001)

摘　　要：报道了SOI基亚微米小尺寸波导光栅器件的设计、制作与测试结果。提出了波导与光栅同步制作的方案,避免了套刻,节约了成本。实验中采用电子束光刻(EBL)、感应耦合等离子体(ICP)刻蚀等先进半导体工艺技术,结合图形补偿等技术手段,完成了亚微米波导光栅的制作。光栅周期为350nm,占空比16∶19。采用该光栅做反射镜,制作了法布里-珀罗(F-P)谐振腔,经测试得到了与模拟相吻合的结果,峰谷比达到11dB。Reported are the design, fabrication and characteristics of silicon-on-insulator （SOD sub-micrometer waveguide grating. Advanced equipments of EBL and ICP-RIE together with the pattern compensating method are utilized to fabricate the waveguide grating devices. In the fabrication processes, a method that the waveguide and the grating can be etched simultaneously was introduced, from which the overprint process was avoided and the cost is lowered. The period of the grating is 350 nm, the duty cycle is 16 ~ 19. Finally, a Fabry-Perot cavity using a pair of the aforementioned gratings as the front and back reflection mirrors was demonstrated. The measured transmission spectrum meets the simulation result as expected, showing a peak-to-valley ratio of 11dB.

关 键 词：亚微米光波导 波导表面光栅 F-P谐振腔 电子束光刻 光子集成 

分 类 号：TN256[电子电信—物理电子学]