一种半导体封装用键合金丝的研制  

Study on Gold Bonding Wires Applied on Semiconductor Package

作　　者：杨国祥[1] 孔建稳[1] 郭迎春[1] 刀萍[1] 吴永瑾[1] 管伟明[1] 

机构地区：[1]贵研铂业股份有限公司昆明贵金属研究所,云南昆明650106

出　　处：《贵金属》2010年第1期13-16,共4页Precious Metals

基　　金：国家科技支撑计划项目(No.2007BAE26B02)

摘　　要：在开发了1种微合金配方的基础上，重点研究了真空熔炼连铸工艺，研制出1种适用于半导体分立器件和集成电路封装的高强度低弧键合金丝。结果表明：1）微合金元素得到有效添加，且分布均匀。2）铸锭组织为粗大柱状晶沿轴向分布。3）机械性能均匀稳定，φ19μm：断裂负荷≥5cN，延伸率2％-6％；φ15μm：断裂负荷≥3cN，延伸率2％-6％。4）与国内外相同规格键合金丝相比，具有更高的强度和更大的熔断电流。A new kind of gold bonding wires was developed by using new micro - alloy formulae, and the vacuum melting and continuous casting process were also studied. This gold bonding wire＇ s properties included： 1 ） the micro- alloying elements were added effectively and distributed uniformly, 2） the ingot blank＇ s structure was large columnar grain which was distributed along the axial distribution, 3 ） the mechanical properties were uniform and steady - φ19 μm： breaking load ≥5 cN, elongation percentage was 2% to 6% ; φ15 μm： breaking load ≥ 3 cN, elongation percentage was 2% to 6%, 4） compared with the same specifications of gold wire for bonding at home and abroad, the new gold bonding wire bad high strength and fusing current. This new kind of gold bonding wires is applied to discrete semiconductor devices and integrated circuit package.

关 键 词：金属材料 键合金丝 连铸 熔断电流 热影响区 

分 类 号：TG146.32[一般工业技术—材料科学与工程]