考虑禁带情况下半导体的电子与空穴分布  

EFFECT OF BAND GAP ON THE DISTRIBUTION OF ELECTRONS AND HOLES IN SEMICONDUCTORS

作　　者：姚毅[1] 张方辉[1] 靳宝安[1] 张麦丽[1] 马颖[1] 

机构地区：[1]陕西科技大学电气与信息工程学院,陕西西安710021

出　　处：《陕西科技大学学报（自然科学版）》2010年第1期124-127,共4页Journal of Shaanxi University of Science & Technology

基　　金：陕西省专利产业化项目(2005ZZ-04);陕西省教育厅产业化项目(06JC23)

摘　　要：在考虑禁带特性的情况下,从理论上探讨了半导体中电子与空穴的分布.以Si为例,利用MATLAB定量分析了不同能量时本征Si半导体中电子占据导带底的几率-温度关系和不同温度时电子占据导带底的几率-能量关系.分析结果表明:导带中绝大多数电子分布在导带底附近,价带中绝大多数空穴分布在价带顶附近;温度越高,电子占据导带底的几率越大,温度每升高20 K,电子占据的几率增加大约4到5倍;导带中能级具有的能量越高,电子占据该能级的几率越低,能量每增加0.02 eV,电子占据的几率下降大约1/2.In this paper, based on considering characteristics of band gap, distribution for electrons and holes of semiconductor was discussed. Take Si example, probability-temperature of electrons occupied conduction band bottom with different energy and probability-energy of electrons occupied conduction band bottom at different temperature are given by MATLAB. It is found that most electrons of conduction band distribute near the bottom and most holes of valence band distribute near the top. The probability of the conduction band bottom energy occupied by electrons increases about four to five times with the temperature increasing by 20 K. The probability of the conduction band bottom energy occupied by electrons decreases about 1/2 with the energy increasing by O. 02 eV.

关 键 词：费米分布 费米能级 波尔兹曼分布 

分 类 号：TN301[电子电信—物理电子学]