Removal Behaviors of Different SiC Ceramics during Polishing  

作　　者：Guiling Liu, Zhengren Huang , Xuejian Liu and Dongliang Jiang Structural Ceramics Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China 

出　　处：《Journal of Materials Science & Technology》2010年第2期125-130,共6页材料科学技术（英文版）

基　　金：supported by the Chinese National Defense Basic Research Project and the Innovation Project of Shanghai Institute of Ceramics,Chinese Academy of Sciences

摘　　要：Comparative experiments were conducted to reveal the removal behaviors of three kinds of silicon carbide （SIC） ceramics during polishing and the effects of ceramic microstructure on the surface quality were also reported. Experimental results show that the second phase in SiC ceramics plays an important role in the surface quality when its size is large enough. The surface quality is enslaved to the formation of steps at interfaces between second phase and SiC matrix that results from different elastic modulus and hardness between two phases. Under 3 μm abrasive grains polishing condition, different SiC ceramics show different removal mechanisms. With decreasing abrasive grain size, all of different SiC ceramics exhibit a ductile removal mode, which decreases surface roughness efficiently.Comparative experiments were conducted to reveal the removal behaviors of three kinds of silicon carbide （SIC） ceramics during polishing and the effects of ceramic microstructure on the surface quality were also reported. Experimental results show that the second phase in SiC ceramics plays an important role in the surface quality when its size is large enough. The surface quality is enslaved to the formation of steps at interfaces between second phase and SiC matrix that results from different elastic modulus and hardness between two phases. Under 3 μm abrasive grains polishing condition, different SiC ceramics show different removal mechanisms. With decreasing abrasive grain size, all of different SiC ceramics exhibit a ductile removal mode, which decreases surface roughness efficiently.

关 键 词：SIC Surface quality Removal behavior POLISHING 

分 类 号：TQ174.1[化学工程—陶瓷工业]