配位剂对Al_2O_3陶瓷表面化学镀铜的影响  

Effects of Complexing Agent on Electroless Copper Plating on the Surface of Al_2O_3 Ceramic

作　　者：王晓虹[1] 周华[1] 冯培忠[1] 孙智[1] 

机构地区：[1]中国矿业大学材料科学与工程学院,江苏徐州221116

出　　处：《电镀与环保》2010年第2期19-21,共3页Electroplating & Pollution Control

基　　金：江苏省自然科学基金资助项目(DK2004032);中国矿业大学青年科研基金资助项目(2008A046)

摘　　要：研究了EDTA，NaKC4H4O6以及两者复配后，对Al2O3陶瓷表面化学镀铜沉积速率、微观形貌、表面粗糙度和镀液稳定性的影响。结果表明：EDTA为配位剂时，化学镀铜镀速为3．86μm／h，镀层表面粗糙度为0．39μm，镀层铜微粒形成团聚，均匀性较差；NaKC4H4O6配位剂时，镀速为4．55μm／h，表面粗糙度为0．46μm，镀层表面有直径达2～5μm的杂质微粒；EDTA和NaKC4H4O6复配使用时，镀速为4．17μm／h，表面粗糙度为0．35μm，铜镀层微观组织致密，铜微粒大小分布均匀，排列紧密，表面平滑、洁净。The effects of EDTA, NaKC4 H4O6 and a compound of the two on the depositing rate, micro-morphology, surface roughness and bath stability of eleetroless copper plating on the surface of Al2O3 ceramic were investigated. The results show that when EDTA is used as sole complexing agent, the plating rate is 3.86μm/h, the surface roughness of plating layer is 0.39μm, agglomerated copper particles are formed and the uniformity of plating layer is poorer; when NaKC4 H4O6 used as sole complexing agent, the plating rate and surface roughness are 4.55 μm/h and 0.46 μm, respectively, and some impurity particles with a diameter of 2~5 μm are observed; and when EDTA and NaKC4 H4O6 are used as a compound complexing agent, the plating rate and surface roughness are 4.17μm/h and 0.35 μm, respectively, and thus obtained copper coating has a compact micro-structure, a uniform and dense copper particle distribution as well as a smooth and clean surface.

关 键 词：化学镀铜 配位剂 微观形貌 沉积速率 

分 类 号：TQ153[化学工程—电化学工业]