纳米硅/单晶硅异质结MAGFET不等位电势补偿研究  

Research for Inequipotential Potentials Compensation of the Nc-Si/c-Si Heterojunction MAGFET

作　　者：赵晓锋[1] 温殿忠[2] 

机构地区：[1]黑龙江大学黑龙江省普通高等学校电子工程重点实验室,哈尔滨150080 [2]黑龙江大学集成电路重点实验室,哈尔滨150080

出　　处：《传感技术学报》2010年第3期363-366,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目资助(60676044);黑龙江省普通高等学校电子工程重点实验室项目资助(DZZD20100013);黑龙江省教育厅科学技术研究项目资助(11521215)

摘　　要：采用CMOS工艺制作的纳米硅/单晶硅异质结MAGFET存在不等位电势VHO,不等位电势VHO随工作电压VDS绝对值增加而增大。通过在纳米硅/单晶硅异质结MAGFET栅极上外加偏置电压VGS,调整导电沟道等效电阻阻值进行不等位电势补偿。实验结果表明,当外加磁场B=0时,工作电压VDS恒定时,随栅极偏置电压VGS绝对值增加,纳米硅/单晶硅异质结MAGFET不等位电势VHO逐渐接近零位输出;采用栅极偏置电压进行不等位电势补偿较外加补偿电阻方法可以使磁传感器灵敏度得到提高,在工作电压VDS为-1.0 V时磁灵敏度约提高18%。The nc-Si/c-Si heterojunction MAGFET manufactured by CMOS process owns inequipotential potentials VHO, which increases with increasing absolute value of supply voltage VDS. Through adding biased voltage VGS to gate of the nc-Si/c-Si heterojunction MAGFET, the inequipotential potentials are compensated by adjusting equivalent resistance values of conducting channels. The experiment result shows, when extra magnetic field B=0, and supply voltage VDS is constant, inequipotential potentials VHO of the nc-Si/c-Si heterojunction MAGFET are close to zero output with increasing absolute value of the gate biased voltage VGS. Adopting gate biased voltage to compensate inequipotential potentials, compared with extra compensation resistance method, could improve magnetic sensor sensitivity, when supply voltage VDS is -1.0 V, magnetic sensitivity can be improved by 18%.

关 键 词：纳米硅/单晶硅异质结MAGFET 磁传感器 不等位电势 磁灵敏度 

分 类 号：TN386.1[电子电信—物理电子学]