近贴聚焦成像器件光电阴极传递封接工艺研究  

The Research of Photoelectric Cathode Transferred and Sealed Technology of Proximity Focused and Imaged Devices

作　　者：程耀进[1] 徐江涛[1] 徐珂[1] 侯志鹏[1] 师宏立[1] 刘峰[1] 

机构地区：[1]西安应用光学研究所微光夜视技术国防科技重点实验室,陕西西安710065

出　　处：《真空电子技术》2009年第6期60-62,共3页Vacuum Electronics

摘　　要：依据近贴聚焦系列成像器件研究的需要,开展了光电阴极真空传递封接工艺研究,并且结合器件的研制对封接工艺质量进行了可靠性的考核。结果证明,用InSn合金焊料进行光电阴极真空传递封接,其工艺稳定,性能质量可靠,封接气密性成品率高。这种工艺除了用于成像器件的研究和生产外,也可用于非匹配材料的气密性封接,具有广泛的应用前景。Follow the need of research of proximity focused system and imaged devices, we carry on the research of photoelectric cathode vacuum transferred and sealed technology. And we combine the device development and carried on to sealing quality of technology received examination of reliability. The results prove that we carry on photoelectric cathode vacuum transferring and sealing with the alloy scolder, its technology and quality are stability and the rate of finished product of sealing gas tightness is high. The technology can use for the sealing of gas tightness of non-matched material except that it uses for research and production of imaging device. It has wide and applied future.

关 键 词：近贴聚焦 成像器件 阴极传递 封接 气密性 

分 类 号：TN223[电子电信—物理电子学]