Far-field superlens for nanolithography  

作　　者：陈健 王庆康 李海华 

机构地区：[1]National Key Laboratory of Micro/Nano Fabrication Technology,Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education,Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University

出　　处：《Chinese Physics B》2010年第3期312-318,共7页中国物理B（英文版）

基　　金：Project supported by the Shanghai Committee of Science and Technology of China (Grant No. 0852nm06600);the National Natural Science Foundation of China(Grant No. 60808014)

摘　　要：A far-field optical lithography is developed in this paper. By designing the structure of a far-field optical superlens, lithographical resolution can be improved by using a conventional UV light source. The finite different time domain numerical studies indicate that the lithographic resolution at 50 nm line width is achievable with the structure shown in this paper by using 365 nm wavelength light, and the light can be transferred to a far distance in the photoresist.A far-field optical lithography is developed in this paper. By designing the structure of a far-field optical superlens, lithographical resolution can be improved by using a conventional UV light source. The finite different time domain numerical studies indicate that the lithographic resolution at 50 nm line width is achievable with the structure shown in this paper by using 365 nm wavelength light, and the light can be transferred to a far distance in the photoresist.

关 键 词：FAR-FIELD LITHOGRAPHY SUPERLENS RESOLUTION 

分 类 号：O439[机械工程—光学工程]