Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) substrate with AlGaN interlayer  

作　　者：吴玉新 朱建军 陈贵锋 张书明 江德生 刘宗顺 赵德刚 王辉 王玉田 杨辉 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors, Chinese Academy of Sciences [2]Institute of Information Function Materials,Hebei University of Technology [3]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第3期407-411,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001,60476021,60576003,60776047and 60836003);the National Basic Research Program of China (Grant No. 2007CB936700);the Project of Technological Research and Development of Hebei Province,China (Grant No. 07215134)

摘　　要：We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an A1N buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an A1N buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

关 键 词：GAN Si （111） substrate metalorganic chemical vapour deposition AIN bufferlayer AlGaN interlayer 

分 类 号：TN304.055[电子电信—物理电子学]