Thermoelectric-transport in metal/graphene/metal hetero-structure  

作　　者：胡昊 蔡金明 张晨栋 高敏 潘毅 杜世萱 孙庆丰 牛谦 谢心澄 高鸿钧 

机构地区：[1]Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences [2]Department of Physics,University of Texas at Austin,USA [3]Department of Physics,Oklahoma State University,Stillwater,Oklahoma 74078,USA

出　　处：《Chinese Physics B》2010年第3期471-476,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60621061);the National Basic Research Program of China (Grant Nos. 2006CB921305 and 2009CB929103)

摘　　要：We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to prcsent the two-dimensional electronic band structure of graphene. Using the LandauerButticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to prcsent the two-dimensional electronic band structure of graphene. Using the LandauerButticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.

关 键 词：graphene Landauer-Butticker formula THERMOELECTRICITY hetero-structure 

分 类 号：O471[理学—半导体物理]