Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition  

作　　者：徐静波 张海英 付晓君 郭天义 黄杰 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2010年第3期491-495,共5页中国物理B（英文版）

基　　金：Project supported by the State Key Development Program for Basic Research of China (Grant No. G2002CB311901);Institute of Microelectronics,Chinese Academy of Sciences,Dean Fund (Grant No. 06SB124004)

摘　　要：This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour deposition （MOCVD）. The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductanee was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour deposition （MOCVD）. The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductanee was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.

关 键 词：GaAs-based metamorphic HEMT maximum current gain cut-off frequency maximum oscillation frequency T-GATE 

分 类 号：TN32[电子电信—物理电子学] TN304.23