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T-GATE: 作品数：17被引量：16H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：和致经刘新宇刘果果黄俊魏珂更多>>; 相关机构：中国科学院微电子研究所淄博汉林半导体有限公司重庆伟特森电子科技有限公司中国科学院更多>>; 相关期刊：《Chinese Journal of Electronics》《Science Bulletin》《Communications in Theoretical Physics》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国科学院重点实验室基金更多>>

Research on self-supporting T-shaped gate structure of GaN-based HEMT devices: 《Chinese Physics B》2023年第6期551-555,共5页张鹏李苗陈俊文刘加志马晓华; Project supported by the National Natural Science Foundation of China(Grant No.62188102);the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2022JM-316);the Fund from the Ministry of Education of China(Grant No.8091B042112)。; A self-supporting T-shaped gate(SST-gate) GaN device and process method using electron beam lithography are proposed.An AlGaN/GaN high-electron-mobility transistor(HEMT) device with a gate length of 100 nm is fabricat...; 关键词：GAN high-electron-mobility transistor(HEMT) SELF-SUPPORTING T-GATE

Optimality of T-gate for generating magic resource: 《Communications in Theoretical Physics》2023年第4期1-9,共9页Xiaohui Li Shunlong Luo; supported by the National Key R&D Program of China,Grant No.2020YFA0712700;the National Natural Science Foundation of China,Grant No.11875317。; In the stabilizer formalism of fault-tolerant quantum computation,stabilizer states serve as classical objects,while magic states(non-stabilizer states)are a kind of quantum resource(called magic resource)for promotin...; 关键词：stabilizer formalism Pauli group Clifford group quantifiers of magic T-GATE

Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs被引量：1: 《Journal of Semiconductors》2021年第9期66-71,共6页Changxi Chen Quan Wang Wei Li Qian Wang Chun Feng Lijuan Jiang Hongling Xiao Xiaoliang Wang; supported by the National Key Research and Development Program of China(2017YFB0402900);the National Natural Sciences Foundation of China(62074144).; In this paper,we investigated the effect of post-gate annealing(PGA)on reverse gate leakage and the reverse bias reliability of Al_(0.23)Ga_(0.77)N/GaN high electron mobility transistors(HEMTs).We found that the Poole...; 关键词：AlGaN/GaN HEMTs gate leakage PF emission post-gate annealing(PGA)

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer被引量：2: 《Chinese Physics B》2019年第4期326-331,共6页Tie-Cheng Han Hong-Dong Zhao Xiao-Can Peng; Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory,China(Grant No.614210701041705); Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/...; 关键词：ALGAN/GAN HEMT BGAN back barrier SHORT-CHANNEL effects(SCEs)

30 nm T-gate enhancement-mode InAIN/AIN/GaN HEMT on SiC substrates for future high power RF applications: 《Journal of Semiconductors》2017年第8期22-27,共6页P.Murugapandiyan S.Ravimaran J.William; The DC and RF performance of 30 nm gate length enhancement mode （E-mode） InAlN/AIN/GaN high electron mobility transistor （HEMT） on SiC substrate with heavily doped source and drain region have been inves- tigated ...; 关键词：HEMT back-barrier recessed gate cut-off frequency regrown ohmic contact short channel effects

T-Gate Fabrication of InP-Based HEMTs Using PMGI/ZEP520A/PMGI/ZEP520A Stacked Resist: 《Chinese Journal of Electronics》2016年第3期448-452,共5页ZHONG Yinghui ZANG Huaping WANG Haili SUN Shuxiang LI Kaikai DING Peng JIN Zhi; supported by the National Natural Science Foundation of China(No.61404115,No.61434006);the Postdoctoral Science Foundation of Henan Province(No.2014006); PMGI/ZEP520A/PMGI/ZEP520 A fourlayer resist stack is firstly proposed for T-gates fabrication of InP-based High electron mobility transistors(HEMTs).Gate-head and gate-foot are exposed in single-step Electron beam lit...; 关键词：T-gate High electron mobility transistors（HEMTs） InP ZEP520A Electron beam lithography（EBL）

Comparison of Single-Step and Two-Step EBL T-Gates Fabrication Techniques for In P-Based HEMT: 《Chinese Journal of Electronics》2016年第2期199-202,共4页ZHONG Yinghui ZANG Huaping SUN Shuxiang WANG Haili LI Kaikai LI Xinjian DING Peng JIN Zhi; supported by the National Natural Science Foundation of China(No.61404115,No.61434006);the Postdoctoral Science Foundation of Henan Province(No.2014006); T-Gate fabrication processes for In P-based High electron mobility transistors(HEMTs) are described using PMMA/Al/UVIII. The single-step and two-step Electron beam lithography(EBL) methods are proposed contrastively w...; 关键词：T-Gate HEMTs EBL technique Two-step EBL technique Polymethylmethacrylate（PMMA）

100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f_T = 249 GHz and f_(max) = 415 GHz被引量：2: 《Chinese Physics B》2014年第3期613-618,共6页汪丽丹丁芃苏永波陈娇张毕禅金智; Project supported by the National Basic Research Program of China(Grant No.2010CB327502); InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length...; 关键词：InP high electron mobility transistor asymmetrically recessed gate cutoff frequency fx maximumoscillation frequency fmax

0.15-μm T-gate In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As InP-based HEMT with fmax of 390 GHz: 《Chinese Physics B》2013年第12期522-526,共5页钟英辉张玉明张义门王显泰吕红亮刘新宇金智; Project supported by the National Basic Research Program of China(Grant Nos.2010CB327502 and 2010CB327505);the Advance Research Project(Grant No.5130803XXXX); In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors （HEMTs） each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF chara...; 关键词：breakdown voltage cut-off frequency high electron mobility transistors maximum oscillation frequency

Fabrication of 150-nm Al_(0.48)In_(0.52)As/Ga_(0.47)In_(0.53)As mHEMTs on GaAs substrates被引量：3: 《Science China(Physics,Mechanics & Astronomy)》2012年第12期2389-2391,共3页WU XiaoFeng LIU HongXia LI HaiOu LI Qi HU ShiGang XI ZaiFang ZHAO Jin; supported by the National Natural Science Foundation of China(Grant Nos.61274026,60274077 and 60976068);the Scientific Research Fund of Hunan Provincial Education Department(Grant No. 10C0709);the Science and Technology Plan Foundation of Hunan Province(Grant No.2011GK3058); High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricat...; 关键词：AlInAs/GaInAs mHEMTs GaAs substrate T-GATE

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