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SHORT-CHANNEL: 作品数：11被引量：19H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：薩支唐揭斌斌更多>>; 相关机构：北京大学中国科学院更多>>; 相关期刊：《InfoMat》《Chinese Physics B》《Science Bulletin》《Chinese Physics Letters》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划天津市自然科学基金更多>>

Investigation of short-channel design on performance optimization effect of Hall thruster with large height–radius ratio被引量：1: 《Plasma Science and Technology》2022年第2期1-9,共9页Haotian FAN Yongjie DING Chunjin MO Liqiu WEI Hong LI Daren YU; This work is funded by the Defense Industrial Technology Development Program(No.JCKY2019603B005);National Natural Science Foundation of China(Nos.52076054,51777045);the Hunan Science and Technology Innovation Project(No.2019RS1102).; In this study,the neutral gas distribution and steady-state discharge under different discharge channel lengths were studied via numerical simulations.The results show that the channel with a length of 22 mm has the a...; 关键词：Hall thruster large height-radius ratio short-channel design discharge performance numerical simulation

Exploitation of Bi2O2Se/graphene van der Waals heterojunction for creating efficient photodetectors and short-channel field-effect transistors被引量：8: 《InfoMat》2019年第3期390-395,共6页Congwei Tan Shipu Xu Zhenjun Tan Luzhao Sun Jinxiong Wu Tianran Li Hailin Peng; support from the National Basic Research Program of China(No.2016YFA0200101);the National Natural Science Foundation of China(Nos.21733001 and 21525310);Boya Postdoctoral Fellowship.; The formation of heterojunction within solid-state devices enables them with eventually high performances,but provides a challenge for material synthesis and device fabrication because strict conditions such as lattic...; 关键词：Bi2O2Se GRAPHENE van der Waals heterojunctions

Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer被引量：2: 《Chinese Physics B》2019年第4期326-331,共6页Tie-Cheng Han Hong-Dong Zhao Xiao-Can Peng; Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory,China(Grant No.614210701041705); Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/...; 关键词：ALGAN/GAN HEMT BGAN back barrier SHORT-CHANNEL effects(SCEs)

A threshold voltage model of short-channel fully-depleted recessed-source/drain(Re-S/D) SOI MOSFETs with high-k dielectric: 《Chinese Physics B》2015年第10期604-611,共8页Gopi Krishna Saramekala Sarvesh Dubey Pramod Kumar Tiwari; supported by the Science and Engineering Research Board(SERB),Department of Science and Technology,Ministry of Human Resource and Development,Government of India under Young Scientist Research(Grant No.SB/FTP/ETA-415/2012); In this paper, a surface potential based threshold voltage model of fully-depleted（FD） recessed-source/drain（Re-S/D）silicon-on-insulator（SOI） metal-oxide semiconductor field-effect transistor（MOSFET） is presen...; 关键词：recessed-source/drain （Re-S/D） high-k gate-material fringing field and SCEs

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon–germanium substrates被引量：1: 《Journal of Semiconductors》2014年第10期30-36,共7页Pramod Kumar Tiwari Gopi Krishna Saramekala Sarvesh Dubey Anand Kumar Mukhopadhyay; The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in terms of subthreshold swing and off-current. The formu- latio...; 关键词：strained-Si channel Si1-xGex substrate dual-metal gate subthreshold current subthreshold swing

Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator MOSFETs被引量：1: 《Journal of Semiconductors》2014年第8期52-59,共8页Gopal Rawat Sanjay Kumar Ekta Goel Mirgender Kumar Sarvesh Dubey S.Jit; This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted （FD） strained-Si-on-insulator （SSOI） MOSFETs having vertical Gaussian-like doping pro- fi...; 关键词：strained-Si-on-insulator （SSOI） Poisson＇s solution short-channel-effects

Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors: 《Chinese Physics Letters》2013年第9期185-189,共5页PENG Chao ZHANG Zheng-Xuan HU Zhi-Yuan HUANG Hui-Xiang NING Bing-Xu BI Da-Wei; Supported by the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(ZHD201205);the National Natural Science Foundation of China(61106103 and 61107031).; The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray irradiation.Radiation enhanced drain-induced barrier lowering(DIBL)under d...; 关键词：DRAIN transistor BIPOLAR

On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile被引量：2: 《Journal of Semiconductors》2013年第5期46-53,共8页Sarvesh Dubey Pramod Kumar Tiwari S.Jit; An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel. The present model is valid in linear and satura- t...; 关键词：drain current DG MOSFET TRANSCONDUCTANCE drain conductance

Performance investigations of novel dual-material gate(DMG) MOSFET with dielectric pockets(DP): 《Science China(Technological Sciences)》2009年第8期2400-2405,共6页LUAN SuZhen LIU HongXia JIA RenXu; Supported by the National Natural Science Foundation of China (Grant No. 60206006);Program for the New Century Excellent Talents of Ministry of Education of China (Grant No. 681231366);the National Defense Pre-Research Foundation of China (Grant No. 51308040103); Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SC...; 关键词：dual material GATE (DMG) DIELECTRIC pockets (DP) SHORT-CHANNEL effect (SCE) CUTOFF frequency

The Theory of Field-Effect Transistors:XI. The Bipolar Electrochemical Currents(1-2-MOS-Gates on Thin-Thick Pure-Impure Base): 《Journal of Semiconductors》2008年第3期397-409,共13页薩支唐揭斌斌; CTSAH Associates(CTSA)资助~~; The field-effect transistor is inherently bipolar, having simultaneously electron and hole surface and volume channels and currents. The channels and currents are controlled by one or more externally applied transvers...; 关键词：bipolar field-effect transistor theory MOS field-effect transistor simultaneous electron and hole surface and volume channels and currents surface potential two-section short-channel theory double-gate impure-base theory

SHORT-CHANNEL