Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory,China(Grant No.614210701041705)
Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/...
supported by the University of Abou-Bekr-Belkaid, Materials and Renewable Energy Research Unit, Tlemcen, Algeria
The objective of this work is to simulate a single quantum well ultraviolet light emitting diode(LED) based on AlGaN/GaN/AlGaN and AlGaN/BGaN/AlGaN, by using TCAD Silvaco simulator. The first structure has a GaN quant...