MOCVD法制备BGaN薄膜  

Epitaxial Growth of BGaN Films by MOCVD

作　　者：曹越 于佳琪 张立东 邓高强[1] 张源涛[1] 张宝林[1] CAO Yue;YU Jia-qi;ZHANG Li-dong;DENG Gao-qiang;ZHANG Yuan-tao;ZHANG Bao-lin(State Key Laboratory on Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China)

机构地区：[1]吉林大学电子科学与工程学院,集成光电子学国家重点联合实验室,吉林长春130012

出　　处：《发光学报》2020年第4期357-363,共7页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2016YFB0401801);国家自然科学基金(61674068,61734001);光电材料与技术国家重点实验(中山大学)开放课题(OEMT2018KF08)资助项目。

摘　　要：利用金属有机物化学气相沉积(MOCVD)技术,在蓝宝石衬底上进行了BGaN薄膜的外延生长,研究了生长厚度、温度、压力和B/Ⅲ比等条件对BGaN薄膜中B组分的影响。X射线衍射测试结果表明,降低生长温度、压力以及增加B/Ⅲ比,更有利于提高BGaN薄膜中B的并入效率。在800℃、30 kPa及B/Ⅲ比为30%的生长条件下,制备的BGaN薄膜中B组分最高,为6.1%。In this work,we used metal organic chemical vapor deposition(MOCVD)technology to carry out epitaxial growth of BGaN films on sapphire substrates.We studied the influence of growth thickness,temperature,pressure and B/Ⅲratio on the boron content of the BGaN films.X-ray diffraction measurement results demonstrate that lowering the growth temperature,pressure and increasing the B/Ⅲratio are conductive to improving the incorporation efficiency of B in BGaN films.At the growth conditions of 800℃,30 kPa and B/Ⅲratio of 30%,the B content of the BGaN film is up to the highest with 6.1%.

关 键 词：氮化硼镓 金属有机物化学气相沉积 薄膜 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TH691.9[自动化与计算机技术—计算机科学与技术]