相关期刊:《通讯和计算机(中英文版)》《The Journal of China Universities of Posts and Telecommunications》《Nano-Micro Letters》《Wuhan University Journal of Natural Sciences》更多>>
Current potentiometric sensing methods are limited to detecting nitrate at parts-per-billion(sub-micromolar)concentrations,and there are no existing potentiometric chemical sensors with ultralow detection limits below...
supported by National Key R&D Program of China (Grant No.2021YFB3602404)。
GaN-based HEMTs have significant advantages,making them a prime choice for high-frequency,high-power switching [1].However,the inherent poor linearity of GaN HEMT has yet to be solved,which can be reflected by the non...
supported by the Shenzhen Science and Technology Program on Key Basic Research Project undergrant JCYJ20210324120409025;the National Natural Science Foundation of China under grant 61904135。
The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system ...
Y.T.L.acknowledges the financial support from the National Research Foundation of Korea(NRF)(No.NRF-2021R1C1C1005235);D.K.H.acknowledges the financial support from the Korea Institute of Science and Technology(KIST)Institution Program(No.2E31532).
Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(...
supported by National Natural Science Fund of China(21802171,22075325);Guangzhou Municipal Science and Technology Project(202002030434).
Organic electrochemical transistors(OECTs)have emerged as versatile platforms for broad applications spanning from flexible and wearable integrated circuits to biomedical monitoring to neuromorphic computing.A variety...
Supported by the Shaanxi Provincial Key Research and Development Program,China(2018NY-158).
In order to obtain the multiple-feedback filter with simpler structure and electronic control,this paper first derives nodal admittance matrix(NAM)equation of the multiple-feedback filter.Furthermore,in accordance wit...
This paper presents a higher order voltage and current mode low pass or high pass filter for wave active filter based on Voltage Differencing Transconductance Amplifiers (VDTAs). The wave equivalent variable technique...
Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0402900);the National Natural Science Foundation of China(Grant No.61634002);the Scientific Research Foundation of Graduate School of Nanjing University,China(Grant No.2016CL03);the Key Project of Jiangsu Province,China(Grant No.BE2016174)
We investigate the negative transconductance effect in p-GaN gate AlGaN/GaN high-electron-mobility transistor(HEMT) associated with traps in the unintentionally doped GaN buffer layer. We find that a negative transcon...
Project supported by the Zhejiang National Natural Science Foundation of China(No.LQ17F040001);the Key Laboratory Open Project Fund of Southeast University,China(No.K201817)
A 2 nd transconductance subharmonic receiver for 245 GHz spectroscopy sensor applications has been proposed. The receiver consists of a 245 GHz on-chip folded dipole antenna, a CB(common base) LNA, a 2 nd transcondu...
This work presents a novel current-mode (CM) lossless integrator that uses one current differencing differential input transconductance amplifier (CDDITA) and one grounded capacitor. The configuration based on single ...