A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness  

作　　者：Sirui AN Minhan MI Pengfei WANG Sijia LIU Qing ZHU Meng ZHANG Zhihong CHEN Jielong LIU Siyin GUO Can GONG Xiaohua MA Yue HAO 

机构地区：[1]School of Microelectronics,Xidian University,Xi’an 710071,China [2]School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China [3]Hubei Jiufengshan Laboratory,Wuhan 430040,China

出　　处：《Science China(Information Sciences)》2024年第1期310-311,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key R&D Program of China (Grant No.2021YFB3602404)。

摘　　要：GaN-based HEMTs have significant advantages,making them a prime choice for high-frequency,high-power switching [1].However,the inherent poor linearity of GaN HEMT has yet to be solved,which can be reflected by the nonlinearity of the transconductance (Gm) profile [2].This makes it hard to achieve high data transmission efficiency and less signal distortion in the wireless communication system [3].

关 键 词：TRANSCONDUCTANCE HEMT HEMTS 

分 类 号：TN386[电子电信—物理电子学]