Research on self-supporting T-shaped gate structure of GaN-based HEMT devices  

作　　者：张鹏 李苗 陈俊文 刘加志 马晓华 Peng Zhang;Miao Li;Jun-Wen Chen;Jia-Zhi Liu;Xiao-Hua Ma(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;School of Advance Material and Nanotechnology,Xidian University,Xi'an 710071,China)

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China [2]School of Advance Material and Nanotechnology,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2023年第6期551-555,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.62188102);the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2022JM-316);the Fund from the Ministry of Education of China(Grant No.8091B042112)。

摘　　要：A self-supporting T-shaped gate(SST-gate) GaN device and process method using electron beam lithography are proposed.An AlGaN/GaN high-electron-mobility transistor(HEMT) device with a gate length of 100 nm is fabricated by this method.The current gain cutoff frequency(f_(T)) is 60 GHz,and the maximum oscillation frequency(f_(max)) is 104 GHz.The current collapse has improved by 13% at static bias of(V_(GSQ),V_(DSQ))=(-8 V,10 V),and gate manufacturing yield has improved by 17% compared with the traditional floating T-shaped gate(FT-gate) device.

关 键 词：GAN high-electron-mobility transistor(HEMT) SELF-SUPPORTING T-GATE 

分 类 号：TN386[电子电信—物理电子学]