Fabrication of 150-nm Al_(0.48)In_(0.52)As/Ga_(0.47)In_(0.53)As mHEMTs on GaAs substrates  

作　　者：WU XiaoFeng LIU HongXia LI HaiOu LI Qi HU ShiGang XI ZaiFang ZHAO Jin 

机构地区：[1]School of Infomation and Electrical Engineering,Hanan University of Science and Technology,Xiangtan 111201 China [2]Guilin University of Electronic Technology,Guilin 541004,China [3]School of Microelectronics Xidian University,Xi'an 710071,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第12期2389-2391,共3页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61274026,60274077 and 60976068);the Scientific Research Fund of Hunan Provincial Education Department(Grant No. 10C0709);the Science and Technology Plan Foundation of Hunan Province(Grant No.2011GK3058)

摘　　要：High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors(mHEMTs) with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system(Ni/Ge/Ti/Au).The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency(fT) and the maximum oscillation frequency(f max) are 188.4 and 250 GHz,respectively.High performance 150-nm gate-length metamorphic Al0.48In0.52As/Ga0.47In0.53 As high electron mobility transistors（mHEMTs） with very good device performance have been successfully fabricated.A T-shaped gate is fabricated by using a combined technique of optical and e-beam photolithography,which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate.The ohmic contact resistance R c is as low as 0.03 mm when using a novel ohmic contact metal system（Ni/Ge/Ti/Au）.The devices exhibit excellent DC and RF performance.A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved.The unity current gain cut-off frequency（fT） and the maximum oscillation frequency（f max） are 188.4 and 250 GHz,respectively.

关 键 词：AlInAs/GaInAs mHEMTs GaAs substrate T-GATE 

分 类 号：TN304.23[电子电信—物理电子学] TM24[一般工业技术—材料科学与工程]