功率半导体器件终端SIPOS/PI复合钝化结构研究  

Study on SIPOS/PI Passivation Structure for Junction Terminal of Power Semiconductor

作　　者：郑英兰[1] 王颖[2] 钟玲[3] 吴春瑜[4] 

机构地区：[1]沈阳职业技术学院电气工程系,辽宁沈阳110045 [2]哈尔滨工程大学信息与通信工程学院,黑龙江哈尔滨150001 [3]沈阳炮兵学院雷达教研室,辽宁沈阳110162 [4]辽宁大学物理学院,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2010年第1期11-14,共4页Journal of Liaoning University：Natural Sciences Edition

摘　　要：本文采用直流辉光放电法在台面功率半导体器件上生长SIPOS钝化膜.研究结果表明,SIPOS钝化的功率器件性能要好于聚酰亚胺钝化的功率器件,可以有效地提高功率器件的可靠性.基于此提出了SIPOS/PI复合钝化结构来改善台面功率半导体器件的表面特性.Direct current glow discharge has been employed to prepare the SIPOS passivation films on the beveled power semiconductor devices. Results obtained indicates that the performance of power semiconductor devices passivated by SIPOS are improved, and SIPOS based process is effective and expected to enhance the reliability of device. Based on this, the SIPOS/PI passivation structure is proposed to improve the characteristic of the surface of beveled power semiconductor device.

关 键 词：斜角造型器件 半绝缘多晶硅 漏电流 钝化 

分 类 号：TN342.4[电子电信—物理电子学]