Al-C-N非晶薄膜结构及导电性研究  

Microstructures and Electrical Conductivity of Amorphous Al-C-N Films

作　　者：罗庆洪[1,2] 于栋利[3] 陆永浩[1] 娄艳芝[2] 王燕斌[1] 

机构地区：[1]北京科技大学材料物理与化学系,北京100083 [2]北京航空材料研究院,北京100095 [3]燕山大学材料科学与工程学院,秦皇岛066004

出　　处：《真空科学与技术学报》2010年第2期138-143,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(No.50871018)

摘　　要：为了揭示Al-C-N非晶薄膜的结构、导电性以及它们之间的关系,本文采用非平衡磁控溅射沉积技术在Si(100)基体上沉积得到了不同Al含量的Al-C-N薄膜。使用X射线光电子能谱仪、X射线衍射和高分辨透射电镜研究了所制备薄膜的相组成和微观结构。采用四引线法测定了薄膜电阻率-温度关系和霍尔电阻率-磁场关系。实验结果表明,所制备薄膜为非晶结构,结构致密,没有明显的缺陷,薄膜中主要的化学键为C-N,C-C和Al-N键。薄膜的成分对其导电性能有着明显的影响,当Al含量较低时,Al-C-N薄膜为p型半导体;当Al含量较高时薄膜转变为绝缘体。The Al-C-N composite films with different M contents were deposited on Si（100） substrates by closedfield unbalanced reactive magnetmn sputtering in a mixture of argon and nitrogen. The microstructures and properties were characterized with X-ray diffraction, X-ray photoelectron spectroscopy Raman spectroscopy, field-emission scanning electron microscopy high resolution transmission electron microscopy and conventional probes. The results show that the amorphous Al-C-N films are compact with unobservable defect density, and that the C-N, C-C and Al-N bonds dominate in the films. In addition, the M content strongly affects its electrical property. For example, low Al content resulted in semi-conducting films;whereas high M content produced the insulating films.

关 键 词：Al—C—N薄膜 磁控溅射 结构 导电性 

分 类 号：TG174.444[金属学及工艺—金属表面处理] O484.4[金属学及工艺—金属学]