脉冲激光沉积法在蓝宝石衬底上制备a轴取向YSZ薄膜  

Growth of a-Axis Oriented Yttria-Stablized-Zirconia Films on Sapphire Substrate by Pulsed Laser Deposition

作　　者：经晶[1] 朱俊[1] 罗文博[1] 张鹰[1] 李言荣[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《真空科学与技术学报》2010年第2期144-148,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家重大基础研究发展计划"973"(61363);国家自科学基金(No.50772019)资助项目

摘　　要：采用脉冲激光沉积方法,通过金红石相TiO2(200)纳米诱导层在蓝宝石衬底上生长了(200)取向的萤石相钇稳定氧化锆(YSZ)薄膜。通过反射式高能电子衍射对薄膜生长过程进行原位监测;用XRD分析进行后位的薄膜结构表征;使用原子力显微镜来观测薄膜的形貌及晶粒大小。结果表明,我们成功地在蓝宝石衬底上外延了具有三重旋转织构的a轴取向萤石相YSZ薄膜,其外延关系为YSZ(200)∥TiO2(200)∥Al2O3(0001);YSZ[010]∥TiO2[001]∥Al2O3[11-20]。The （200） preferentially oriented yttria-stablized-zirconia （YSZ） fluorite structured films were grown by pulsed laser deposition on （0001） sapphire substrates, covered with a TiO2 （200） nano buffer layer. The growth was in situ monitored with the reflection high energy electron diffraction; and the microstructures of the as-deposited films were characterized with X-ray diffraction and atomic force microscopy. The results show that the a-axis oriented fluorite YSZ films with smooth and compact surfaces were epitaxially grown on TiO2 coated sapphire substrate, the in-plane relationships of which are YSZ（200）//TiO2（200） //Al2O3（0001） with the in-plane ＇alignment of YSZ[010]//TiO2[001 ]// Al2O3[ 11 -20] with the three rotational variants of the YSZ.

关 键 词：YSZ薄膜 外延生长 脉冲激光沉积 反射式高能电子衍射 

分 类 号：O484.1[理学—固体物理] O484.2[理学—物理]