碳化硅合成中扩散动力学机制研究与探讨  

Study on diffusion kinetics for synthesizing SiC

作　　者：王晓刚[1] 刘向春[1] 李晓池[1] 樊子民[1] 田欣伟[1] 

机构地区：[1]西安科技大学材料科学与工程学院,陕西西安710054

出　　处：《西安科技大学学报》2010年第2期212-216,231,共6页Journal of Xi’an University of Science and Technology

基　　金：陕西省13115科技创新工程重大科技专项(ZDKG-46);陕西省重大创新工程重大科技专项(2007ZKC-03-04)

摘　　要：对采用多热源技术工业合成SiC中扩散动力学机制进行了研究与探讨。论述了工业中供电制度对物质扩散动力学的影响,进而从理论上探讨了供电制度对能耗水平及产品品质的重要影响,以及原料颗粒大小与反应动力学之间的关系,以期促进我国这类产业步入合理的能耗水平、高质量产品和高效率生产轨道,从根本上提升产业的科学技术水平,增强产品市场竞争力。The kinetics of diffusion for synthesizing SiC was studied. The effect of power supply process on material diffusion dynamics was explored. And then discussing the important impact of power supply process on the energy consumption levels and product quality from the theory and exploring the relation- ship between the raw material particle size and reaction kinetics. With a view to realize this industry in China a reasonable energy consumption level, high-quality products and efficient production, from the fundamental science and technology to upgrade the industry level, and enhance the competitiveness of product markets.

关 键 词：碳化硅 Β-SIC 扩散动力学 

分 类 号：O643.1[理学—物理化学]