锑化物超晶格红外探测器的研究进展  

Research Progress in Sb-based Superlattice Infrared Detectors

作　　者：李彦波[1] 刘超[1] 张杨[1] 赵杰[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《固体电子学研究与进展》2010年第1期11-17,共7页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60876004)

摘　　要：InAs/InGaSb超晶格具有特殊的能带结构,优越的材料性能,被认为是第三代红外探测器的首选材料。对InAs/InGaSb超晶格的材料性能、材料生长、探测器结构和探测器研究进展进行了介绍,并指出了超晶格探测器进一步发展需要解决的问题及其广阔的应用前景。Because InAs/InGaSb superlattices have special energy band structure and excellent material performances, they have been chosen as the preferred candidate of the third generation infrared detectors. In this paper, the material properties, material growth, structure of detector and research progress of InAs/InGaSb superlattice detectors are briefly introduced. The issues of superlattice detectors needed to be solved and potential market applications in the future are also pointed out.

关 键 词：第三代红外探测器 砷化铟/铟镓锑 Ⅱ类超晶格 双色探测器 

分 类 号：TN215[电子电信—物理电子学] TN304.2