n-i-p型非晶硅太阳电池中p/ITO界面特性研究  

A study of p/ITO interface properties in n-i-p type amorphous silicon solar cells

作　　者：倪牮[1] 陈新亮[1] 曹丽冉[1] 张建军[1] 薛俊明[1] 孙建[1] 王先宝[1] 韩东港[1,2] 张德坤[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071 [2]河北工业大学信息工程学院,天津300130

出　　处：《光电子．激光》2010年第1期55-58,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"重点基础研究资助项目(2006CB202602;2006CB202603);国家科技计划配套资助项目(07QTPTC29500);国家高技术发展计划资助项目(2009AA05Z422);天津应用基础及前沿技术研究计划资助项目(08JCZDJC22200;09JCYBJC06900);天津市科技发展规划资助项目(06YFGZGX02100)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备n-i-p型非晶硅(a-Si)太阳电池,采用反应热蒸发法制备ITO薄膜作为太阳电池的前电极。通过改变B2H6的掺杂浓度获得了不同晶化率的p层,详细研究了p层性能对p/ITO界面特性以及电池性能的影响。结果表明,在合适晶化率的p层上沉积ITO薄膜有利于优化p/ITO界面的接触特性,将其应用于n-i-p型a-Si太阳电池,能够显著改善电池的开路电压(Voc)和填充因子(FF),最终,在不锈钢(SS)衬底上获得了转换效率为6.57%的单结a-Si太阳电池。A series of n-i-p type amorphous silicon solar cells are prepared by radio-frequency plasma enhanced chemical vapor deposition（RF-PECVD）,and ITO films as front contact layer are prepared by reactive thermal deposition technique.A series of p layer with different crystalline volume fraction（Xc） are fabricated by changing B2H6 doping concentration.The influences of p layer on the p/ITO interface as well as n-i-p type solar cell properties are investigated in detail.The results show that the contact property of p/ITO interface and the Voc and FF of solar cells are improved by optimized p layers with proper crystallinity.Finally,the n-i-p type a-Si solar cells with efficiency of 6.57% have been obtained on stainless steel（SS） substrates.

关 键 词：n-i-p太阳电池 不锈钢(SS)衬底 p/ITO界面 

分 类 号：O484[理学—固体物理]