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作 者:胡志刚[1] 周勋[1,2] 徐明[1,3] 刘方舒[4] 段满益[1] 吴定才[1] 董成军[1] 陈尚荣[1] 吴艳南[1] 纪红萱[1] 令狐荣锋[3]
机构地区:[1]四川师范大学物理与电子工程学院固体物理研究所 [2]贵州师范大学物理与电子科学学院,贵阳550001 [3]贵州师范大学物理与电子科学学院 [4]攀枝花学院材料工程系
出 处:《人工晶体学报》2010年第1期257-261,共5页Journal of Synthetic Crystals
基 金:贵州省科学技术基金(黔科通J合[2006]2004)
摘 要:采用溶胶-凝胶法在玻璃基片上旋涂生长了ZnO、Fe,Ni单掺杂及(Fe,Ni)共掺杂ZnO薄膜。产物的显微照片及XRD图谱结果表明,该方法所制备的ZnO薄膜表面均匀致密,都存在(002)择优取向,具有六角纤锌矿结构,晶粒尺寸平均在13nm左右,振动样品磁强计(VSM)测试结果显示掺杂ZnO薄膜均存在室温铁磁性。光致发光(PL)测量表明所有样品薄膜的PL谱主要由较强的紫外发光峰(394nm)、蓝光峰(420nm)、绿光峰(480nm)组成。Fe、Ni单掺杂和共掺杂并不改变ZnO薄膜的发光峰位置,但掺杂后该紫外发光峰减弱,420nm处的蓝光峰增强。Fe and/or Ni doped ZnO thin films on the glass substrates were prepared by sol-gel spin-coating method.The morphology of the prepared ZnO thin films observed by microscopy revealed that all the ZnO films are uniform and dense.The X-ray diffraction (XRD) results indicated all the ZnO films show preferential orientation along (002) direction and the grain size of ZnO films is ~13 nm.There are three emissions peaks being observed in the photoluminescence (PL) spectra at room temperature,which are located at 394 nm,420 nm,and 480 nm.The peak of ZnO thin films are not remarkably shifted after Fe and/or Ni doping.However,the intensity of the ultraviolet peak in doped ZnO thin films is significantly weakened,and that of blue emission is strengthened.The room-temperature ferromagnetism was observed for all the doped ZnO samples and it depends on the coupling between the current carrier caused by substituted ions and defects.
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