80keV N离子注入对ZnO薄膜结构的影响  

Effects of 80 keV N-ion Implantation on Structures of ZnO Films

作　　者：臧航[1,2] 王志光[1] 魏孔芳[1,2] 孙建荣[1] 姚存峰[1,2] 申铁龙[1,2] 马艺准[1,2] 杨成绍[1,2] 庞立龙[1,2] 朱亚斌[1,2] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000 [2]中国科学院研究生院,北京100049

出　　处：《原子核物理评论》2010年第1期87-91,共5页Nuclear Physics Review

基　　金：中国科学院知识创新方向性项目(KJCX2-YW-M11);国家自然科学基金资助项目(10835010)~~

摘　　要：室温下用80keVN离子注入ZnO薄膜样品,注量分别为5.01014,5.01015和5.01016ions/cm2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征。实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×1015ions/cm2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势。对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论。ZnO thin films were implanted at the room temperature by 80 keV N-ions to 5.0×10^14,5.0×10^15 or 5.0×10^16 ions/cm^2,the structural characteristics of the samples were investigated using X-ray diffraction（XRD） spectrometer and transmission electron microscopy（TEM）.It was found that the un-implanted ZnO films are constituted of columnar crystals which are very compact and of preferred c-axis orientation.After N-ion implantation,the crystal lattice constant and the biaxial compressive stress increased with the increasing of the N-implantation dose.In the 5.0×10^16 N-ions/cm^2 implanted ZnO sample,a new XRD peak due to defects or N-dopants appeared.Moreover,defects and localized disordering in the 5.0×10^15 N-ions/cm^2 implanted ZnO films have been observed under high resolution TEM measurement.However,N-ion implantation could not change significantly the crystal structure of the ZnO films.Possible mechanism of the structural modification of ZnO films by N-ion implantation was briefly discussed.

关 键 词：ZNO薄膜 N离子注入 X射线衍射 透射电镜 

分 类 号：O484.5[理学—固体物理]