量子限制受主远红外电致发光器件的制备与测量  

Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

作　　者：刘静[1] 郑卫民[1] 宋迎新[1] 初宁宁[1] 李素梅[1] 丛伟艳[1] 

机构地区：[1]山东大学威海分校空间科学与物理学院,威海264209

出　　处：《物理学报》2010年第4期2728-2733,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60776044);山东省自然科学基金(批准号:2006ZRA10001)资助的课题~~

摘　　要：采用分子束外延技术生长GaAs/AlAs三量子阱,并在中间的GaAs阱中δ-掺杂浅受主杂质Be原子,制作出量子限制受主远红外Teraherz原型电致发光器件.实验上测量得到4.5K时器件的电致发光谱(EL)和电传输特性(I-V曲线).在EL发射谱中清楚地观察到222cm-1处宽的尖峰,这来源于Be受主奇宇称激发态到其基态的辐射跃迁,而非辐射弛豫过程则使发射谱的信号很弱.另外在I-V曲线中0.72和1.86V的位置出现两个共振隧道贯穿现象,分别对应于中间δ-掺杂量子阱受主能级1s3/2(Γ6+Γ7)到左边非掺GaAs量子阱中HH带,及右边非掺杂GaAs量子阱中HH重空穴带到中间掺杂GaAs量子阱中Be受主杂质原子奇宇称激发态2p5/2(Γ6+Γ7)能级的共振隧穿.GaAs/AlAs triple-quantum-well samples were grown by molecular beam epitaxy,and the middle GaAs quantum-well layer was delta-doped at the well centre with Be shallow acceptors.Then the far-infrared Teraherz prototype emitter was fabricated using the samples.Electroluminescence（EL） and current-voltage characteristics（I-V） were measured at 4.5 K.In the EL spectrum,a wide peak was observed clear 222 cm-1,which is attributed to the Be acceptor＇s radiative transitions from the excited odd-parity states to the ground state.Nevertheless,the emission signal was weakened by non-radiative relaxation processes.In the I-V curve,the negative differential resistance characteristic at the position of 0.72 and 1.86 V was also observed clearly.This is attributed to the resonant tunneling between Be acceptor 1s3/2（Γ6 ＋ Γ7） energy level in the middle quantum-well and the HH1 band in the left-side non-doping quantum-well,as well as the resonant tunneling between the HH band in the right-side non-doping quantum-well and Be acceptor 2p5/2（Γ6＋Γ7） energy level.

关 键 词：量子限制效应 电致发光 共振隧穿效应 δ-掺杂GaAs/AlAs三量子阱 

分 类 号：O471.1[理学—半导体物理]