CdTe太阳电池中起因于Cu的深能级  

Cu deep level center in CdTe solar cell

作　　者：郑旭[1] 黎兵[1] 王钊[1] 张东廷[1] 冯良桓[1] 张静全[1] 蔡亚平[1] 郑家贵[1] 武莉莉[1] 李卫[1] 雷智[1] 曾广根[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《物理学报》2010年第4期2783-2788,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2003AA513010);国家自然科学基金(批准号:60506004)资助的课题~~

摘　　要：在CdTe太阳电池中,易引入并形成Cu深能级中心.本文采用深能级瞬态谱测试法研究了ZnTe背接触和石墨背接触CdTe太阳电池的部分深能级中心.研究中运用密度泛函相关理论,分析闪锌矿结构CdTe,Cd空位体系和掺Cu体系的电子态密度,计算得出Td场和C3v场下Cu2+d轨道的分裂情况.计算结果表明,CdTe太阳电池中的Ev+0.206eV和Ev+0.122eV两个深中心来源于Cu替代Cd原子.计算结果还表明,掺入Cu可降低CdTe体系能量.Cu would be doped and form deep level centers easily in CdTe solar cells.The deep level centers in ZnTe back contact and graphite back contact CdTe solar cells were studied by deep level transient spectroscopy（DLTS）.The electronic density of states on zinc blende CdTe,VCd system and CdTe doping Cu were analyzed with density functional theory.The d-orbital splitting of Cu2＋ in C3v and Td fields was obtained.The results show that two deep centers Ev＋0.206 eV and Ev＋0.122 eV,respectively,are attributed to substitutional Cu,energy of CdTe is reduced after Cu doping,and Cu could replace Cd.

关 键 词：深能级瞬态谱 第一性原理 CDTE Cu杂质 

分 类 号：TM914.4[电气工程—电力电子与电力传动]