掺铋BaF_2晶体的制备及其近红外发光研究  

Preparation and near-infrared luminescence properties of Bi-doped BaF_2 crystal

作　　者：周朋[1,2] 苏良碧[2] 李红军[2] 喻军[2,3] 郑丽和[2] 杨秋红[1] 徐军[2] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072 [2]中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海201800 [3]宁波大学信息科学与工程学院光电子功能材料研究所,宁波315211

出　　处：《物理学报》2010年第4期2827-2830,共4页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60778036);上海市科技委员会自然科学基金(批准号:08ZR1421700)资助的课题~~

摘　　要：通过温度梯度法制备了Bi2O3:BaF2以及BiF3:BaF2晶体.在Bi2O3:BaF2晶体中观察到了发光峰位于961nm,半高宽202nm的超宽带红外发光.在BiF3:BaF2晶体中检测到Bi2+和Bi3+可见区的发光,但是没有观察到红外发光.通过γ射线辐照实现了BiF3:BaF2晶体的近红外发光,发光峰位于1135nm,半高宽192nm.讨论了Bi2O3和BiF3掺杂BaF2晶体的红外发光的机理.Bi2O3：BaF2 and BiF3：BaF2 crystals were prepared by TGT（temperature gradient method）.Near-infrared broadband luminescence was observed in as-grown Bi2O3：BaF2 crystal.The emission band peaks at 961 nm in the range of 850—1250 nm,with FWHM about 202 nm.The luminescence of Bi2 ＋ and Bi3 ＋ ions in the visible region was observed in BiF3：BaF2 crystal,but there was no near-infrared emission.Then the BiF3：BaF2 crystal was exposed to γ-rays in order to reduce valence states of Bi ions.Near-infrared broadband luminescence was observed in γ-irradiated BiF3：BaF2 crystal.The emission band peaks at 1135 nm in the range of 850—1500 nm,with FWHM about 192 nm.The mechanisms of near-infrared luminescence in Bi2O3：BaF2 crystals and γ-irradiated BiF3：BaF2 crystals were discussed.

关 键 词：近红外发光 铋 氟化钡晶体 Γ辐照 

分 类 号：O734[理学—晶体学]