Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations  

作　　者：叶寒 芦鹏飞 俞重远 姚文杰 陈智辉 贾博雍 刘玉敏 

机构地区：[1]Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications

出　　处：《Chinese Physics B》2010年第4期375-380,共6页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(Grant No.2009AA03Z405);the National Natural Science Foundation of China(Grant Nos.60908028 and 60971068);the High School Innovation and Introducing Talent Project of China(Grant No.B07005);the Chinese Universities Scientific Fund(Grant No.BUPT2009RC0412)

摘　　要：We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band κ · p theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band κ · p theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.

关 键 词：quantum dot threading dislocation electronic structure absorption efficiency 

分 类 号：O471.1[理学—半导体物理]