6H-SiC表面热氧化SiO_2的正电子谱研究  

A PAS study on the thermally oxidated SiO_2 film on 6H-SiC

作　　者：袁菁[1] 龚敏[1] 王海云[2] 翁惠民[2] 

机构地区：[1]四川大学物理科学与技术学院微电子技术四川省重点实验室,成都610064 [2]中国科技大学近代物理系,合肥230026

出　　处：《四川大学学报（自然科学版）》2010年第2期331-334,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：本文将慢正电子湮灭多普勒展宽谱技术,应用于对SiC表面热氧化生长的SiO_2特性的研究.S参数和W参数在退火前后的变化,直观的反映出SiO_2/SiC表面氧化层中空位型缺陷浓度的改变.通过与SiO_2/Si样品的对比,证实C元素及其诱生空位型缺陷的存在,很可能是影响SiO_2/SiC氧化层质量和SiC MOS击穿特性的重要因素,后退火工艺可以提高SiO_2/SiC中氧化层的致密性.实验表明,慢正电子湮灭多普勒展宽谱是研究热氧化SiO_2特性的有效手段.In this article, positron annihilation Doppler-spread-spectroscopy was used to study the SiO2 film by thermal oxidation on 6H-SiC. The change of both S parameter and W parameter before and after annealing could show the void-like defects in SiO2 on SiC. Compared with SiO2/Si, the existence of carbon atoms and void-like defects in SiO2 might be the reasons of low breakdown voltage of SiO2/SiC MOS structure. The experiments indicated that, post-annealing processing could improve the quality of the SiO2 layer. It was also indicated that positron annihilation Doppler-spread-spectroscopy was very useful to study the SiO2 film by thermal oxidation.

关 键 词：慢正电子湮灭多普勒展宽谱 6H—SiC SIO2 空位型缺陷 退火工艺 

分 类 号：O411[理学—理论物理]