FEC法生长Si和In双掺GaAs单晶生长技术  

Crystal Growth of Si and In Double-Doped GaAs by FEC Technique

作　　者：周春锋[1] 杨连生[1] 刘晏凤[1] 李延强[1] 杜颖[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2010年第4期313-316,共4页Semiconductor Technology

摘　　要：研究了几种消除LEC GaAs材料的位错措施以降低温度梯度从而尽可能降低晶体的热应力。掺入等电子In或Si使杂质硬化,为了抑制晶体表面产生位错,开发了全液封切克劳斯基(FEC)晶体生长技术。结合以上三种技术开发出了Si和In双掺FEC GaAs单晶生长技术以消除位错。采用此技术已生长出半导体低位错密度的GaAs晶体,经证实这种掺Si和In低位错GaAs衬底可以满足GaAs LED制作。Several measures were developed to eliminate dislocation in LEC （liquid encapsulated Czoehralski） grown GaAs materials, by redncing thetemperature gradient to decrease thermal stresses in the crystal as small as possible. Through doping isoeleetric In and Si for impurity hardening and FEC （full encapsulated Czchralski） pulling technique, the dislocation generation from the crystal surface was effectively suppressed. In order to eliminate dislocations, combing the above three techniques, the growth of In and Si double-doped GaAs crystal was developed. GaAs crystals with low dislocation-density and semi-conducting are grown. The result demonstrates that the Si and In double-doped dislocation-low GaAs is appropriate substrate for GaAs LEDs.

关 键 词：铟和硅双掺杂 全液封 砷化镓单晶 液封直拉法 

分 类 号：TN304.23[电子电信—物理电子学]