新型亚纳秒切断半导体开关器件研制  

Design and Manufacture of Novel Subnanosecond Opening Semiconductor Switch

作　　者：马红梅[1] 刘忠山[1] 杨勇[1] 刘英坤[1] 崔占东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第4期337-339,共3页Semiconductor Technology

摘　　要：介绍了一种新型亚纳秒切断全固态高功率脉冲开关器件,阐述了其工作机理。该器件利用器件体内等离子体特殊的恢复过程来完成电流的迅速切断。采用多层Si片叠加的制造工艺技术,单个器件反向工作峰值电压大于2 kV,电流切断时间小于800 ps,脉冲峰值功率可达80 kW。该器件具有易串并联、抖动小等优点。基于该器件制作的脉冲发生器具有体积小、可靠性高、使用寿命长、脉冲重复频率高、输出波形稳定等特点。当采用器件串联电路连接时,可以获得几十千伏以上的高压快速脉冲。采用该器件制作的脉冲发生器在国防、医疗等领域具有广阔的应用前景。A novel subnanosecond opening semiconductor solid-state high-power pulse switch is introduced and its working principle is described. The high current rapid opening is carried out by special recovery process of plasma. By the technology of piling muhilayer silicon wafers up, the reverse working peak voltage of single device is more than 2 kV, current opening time is less than 800 ps, and peak pulse power is up to 80 kW. This device has the advantages of easy series-parallel connection, low jitter. Pulse generator manufactured based on this device has many advantages, such as small size, high reliability, long life, high repeating frequency, stable output wave etc. High voltage rapid pulse more than tens of kV would be attained when the devices are connected in series. Pulse generators designed with this switch are very promising in national defense and medical treatment applications.

关 键 词：漂移阶跃恢复器件 等离子体 半导体切断开关 脉冲开关 脉冲发生器 

分 类 号：TN313.6[电子电信—物理电子学]