高效率连续1000 W半导体激光器叠层阵列  

High Efficiency CW 1 000 W Semiconductor Laser Stack Array

作　　者：杨红伟[1] 黄科[1] 陈宏泰[1] 彭海涛[1] 王媛媛[1] 徐会武[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第4期340-343,共4页Semiconductor Technology

摘　　要：采用低压MOCVD外延技术生长的GaInAs/AlGaAs应变量子阱大光腔结构材料结构设计,利用低压MOCVD外延技术生长了3英寸(75 mm)激光器外延片,进而设计制作了976 nm大功率低热阻连续激光器芯片。采用以及高热导率的无氧铜材料设计制作了大功率微通道热沉,采用In焊料芯片倒装烧结工艺,制作了976 nm连续激光器阵列单条。在20℃水冷条件下,输入电流120 A,工作电压1.51 V,输出功率达到118 W,电光功率转换效率约65%。将10只微通道阵列单条堆叠组装,制作了连续1 000 W微通道叠层阵列。在20℃水冷条件下,输入电流120 A,输出功率达到1 130 W,工作电压1.45 V,电光功率转换效率约65%。Based on the design of GaInAs/A1GaAs compress strained quantum well and large optical cavity structure, the 3 inch （75 mm） LD wafer is grown on LP-MOCVD. High efficiency and high power 976 nm LD chip was fabricated. High thermal conductivity thermal resistance micro-channel heatsink. The 976 nm CW technology. At the water cool temperature 20 ℃ and water Cu was used for designing and manufacturing low laser bar was fabricated with soft indium flip-chip pressure 0.5 MPa, when input current is 120 A, the output power of laser bar is 118 W, voltage is 1.51 V, and the power conversion efficiency reaches 65 %. 1 000 W laser stack array was fabricated with 10 laser bars. The laser stack output power is 1 130 W at the water cool temperature 20 ℃ and water pressure 0.5 MPa, when input current is 120 A. The power conversion efficiency reaches 65 %.

关 键 词：应变量子阱 大光腔结构 微通道热沉 激光器叠层阵列 电光功率转换效率 串联电阻 

分 类 号：TN248[电子电信—物理电子学]