空间太阳电池用超薄Ge单晶片的CMP技术  

CMP Technology of Ultra-Thin Germanium Single Crystal Wafer for Space Solar Cell

作　　者：林健[1] 赵权[1] 刘春香[1] 杨洪星[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2010年第4期361-364,共4页Semiconductor Technology

摘　　要：以Ge单晶抛光片为衬底的空间太阳电池在我国的应用已越来越多。目前,抛光后Ge单晶片的几何参数,尤其是表面状态常不能满足使用要求。介绍了超薄Ge衬底片抛光的工艺技术,开展了抛光压力、抛光盘转速与抛光去除速率的关系实验,对影响Ge单晶抛光片几何参数和表面质量的原因进行了分析和实验研究。工艺优化后抛光的产品完全满足了空间高效太阳电池的衬底的使用要求。Application of space solar cell with Ge single-crystal polished wafer as substrate is widely used in China. Currently, the geometrical parameters of polished wafer, especially the surface status of wafer cannot meet the requirements. The polishing technology of ultra-thin Ge substrate is introduced, relative experiments of the polishing pressure, polishing plate speed with polishing removal rate are researched. The reasons affecting Ge single-crystal polished wafer geometric parameters and the surface quality are analyzed and experimentally researched. The optimized products fully meet the use of space efficient solar cells.

关 键 词：锗单晶片 抛光 空间太阳电池 

分 类 号：TN305.2[电子电信—物理电子学]