选择性发射极参数对太阳电池光电特性的影响  

Effect of Selective Emitter Parameters on Photoelectrical Characteristics of c-Si Solar Cell

作　　者：吴正军[1] 梁海莲[1] 顾晓峰[1] 

机构地区：[1]江南大学信息工程学院,江苏无锡214122

出　　处：《微纳电子技术》2010年第4期202-206,共5页Micronanoelectronic Technology

基　　金：教育部留学回国人员科研启动基金资助项目(教外司留[2008]890);教育部新世纪优秀人才支持计划资助项目(NCET-06-0484)

摘　　要：选择性发射极太阳电池具有独特的器件结构及优异的光电特性。基于M·Tucci等人实际制作的一款选择性发射极太阳电池,利用TCAD软件MEDICI建立了其器件结构模型,在比实验更大的参数范围内分析了发射区厚度、n+区和n区掺杂浓度等物理量对太阳电池光电转换效率的影响。结果表明,发射区的最佳厚度约为0·6μm,该厚度下n+区的最佳掺杂浓度约为6×1020cm-3,增加n区浓度则会导致转换效率下降。在优化发射区方块电阻的基础上考虑少子寿命的优化,可获得高达19·16%的光电转换效率,接近当前较大面积同类太阳电池的最佳水平,为实际制备大面积高效单晶硅太阳电池提供了有益的参考。The selective emitter solar cell has the special device structure and superior photoelectrical characteristics.Based on an experimentally fabricated device,the structure model of the selective emitter solar cell was established using the TCAD software MEDICI in this work.Effects of the emitter depth and the doping concentrations n＋ and n areas on the conversion efficiency were then investigated by simulation in a larger parameter range than the experiment.Results indicate that the optimal emitter depth is about 0.6 μm,the optimal doping concentration of n＋ area is about 6×1020 cm-3,while increasing the doping concentration of n area leads to decreasing the photoelectrical conversion efficiency.After optimizations of both the square resis-tance of emitter and the lifetime of minors,a peak photoelectrical conversion efficiency of about 19.16% can be reached,which is close to the highest level acquired in similar large-area solar cells.The results can provide helpful reference to the fabrication of large-area high-efficiency single crystalline silicon solar cells.

关 键 词：太阳电池 选择性发射极 光电转换效率 TCAD软件 模拟 

分 类 号：TM914.41[电气工程—电力电子与电力传动]