不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响  

The low dose rate radiation response of NPN bipolar transistors under different bias

作　　者：费武雄[1,2,3] 陆妩[1,2] 任迪远[1,2] 郑玉展[1,2,3] 王义元[1,2,3] 陈睿[1,2,3] 王志宽 杨永晖 李茂顺[1,2,3] 兰博[1,2,3] 崔江维[1,2,3] 赵云[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院研究生院,北京100049 [4]集成电路国家重点实验室,重庆400060

出　　处：《核技术》2010年第4期274-277,共4页Nuclear Techniques

摘　　要：对NPN双极晶体管进行了低剂量率下不同偏置条件的电离辐射实验。结果表明,不同偏置条件下的低剂量率辐射损伤具有明显差异。基-射结反向偏置时,其过剩基极电流最大,电流增益衰减最为显著。而基-射结正向偏置时,过剩基极电流和电流增益衰减都最小。讨论了出现这种结果的内在机制。At low dose rate, ionizing radiation response of NPN bipolar transistors at different base-emitter junction bias, i.e, negative bias, positive bias and zero bias, was investigated in this paper. Under low dose rate irradiation of up to 1 kGy by ^60Co γ-rays, the NPN bipolar transistors at different bias behaved differently. An NPN bipolar transistor in irradiation with negative biased at the base-emitter jtmction, the excess base current and gain degradation were much larger than those of the other two bias situations, and the excess base current and gain degradation were minimal when the base-emitter junction was positively biased. Possible mechanism was discussed.

关 键 词：NPN双极晶体管 低剂量率 偏置 60Coγ辐照 

分 类 号：TN322.8[电子电信—物理电子学]