强紫外发射ZnO薄膜的溅射方法制备及表征  

Preparation and Characterization of ZnO Films with Strong Ultraviolet Emission by DC Sputtering

作　　者：张伟英[1] 刘振中[1] 陶亚萍[1] 

机构地区：[1]洛阳师范学院物理与电子信息学院,河南洛阳471022

出　　处：《洛阳师范学院学报》2010年第2期27-30,共4页Journal of Luoyang Normal University

基　　金：洛阳师范学院培育基金(2008-PYJJ-09)

摘　　要：采用直流反应溅射方法在N型Si(100)衬底上制备了ZnO薄膜.薄膜的晶体结构采用X射线衍射技术来表征,测量结果表明制备的样品是沿c轴高度取向的六方纤锌矿结构的多晶薄膜.扫描电子显微镜测量显示薄膜的表面粗糙度较低,且ZnO与Si衬底的边界线清晰,结构致密.此外,利用室温光致发光谱研究了薄膜的光学性能,ZnO薄膜的室温光致发光谱(PL)只有位于377nm处的一个很强的紫外峰,这与材料内的激子复合有关.此外对薄膜进行了拉曼散射的研究,拉曼频移的计算结果表明溅射生长的薄膜中存在张应力(0.25Gpa).ZnO film has been prepared on N type Si（100） substrates by DC sputtering.Crystal structure of ZnO films have been examined by X ray diffraction,the result demonstrate that the samples have a strong c axis oriented perpendicularly onto Si substrates.Scan Electron Microscopy shows the flatten surface and the clear interface between Si substrate and ZnO film.Photoluminescence spectrum of ZnO film has a strong ultraviolet peak at 377nm with respect to exciton compound transition,it suggests that the samples have good crystalline quality.Raman Scattering spectrum shows the representative crystal lattice libration of ZnO film,and based on the frequency shift of it,we have calculated the remnants stress in the ZnO film.

关 键 词：ZNO薄膜 X射线衍射 光致发光谱 拉曼散射 

分 类 号：TN304.2[电子电信—物理电子学]