对向靶反应溅射制备AlN薄膜的结构及物性  

Aluminium Nitride Films Preprared by Facing Targets Sputtering and Their Characteristics

作　　者：吴世伟[1] 曾令民[1] 张丽萍[1] 覃文 

机构地区：[1]广西大学材料科学研究所,南宁530004

出　　处：《广西大学学报（自然科学版）》1998年第2期131-134,共4页Journal of Guangxi University（Natural Science Edition）

摘　　要：用对向靶反应溅射制备的AIN薄膜(Si(100)基片),高气压为(100)取向,低气压下为(002)取向,精确测量XRD衍射峰位可看出AIN薄膜有较大应力.由AIN(100)取向薄膜XPS分析结果可知,AI2P和N1S的结合能分别为73.7eV和396.7eV.对硬度的测量发现AIN薄膜硬度较大,取向对硬度没有影响.Aluminium nitride (AlN) films are deposited on Si(lOO) wafers by facing targets sputtering in a mixed Ar - N 2 discharge. It is found that C - axis oriented films are deposited at low pressures and the films with (100) orientation are deposited at high pressures. There is an expansion of C -axis and shows that the films are in a state of strong stress. Binding en ergies of the N 1S and Al 2P are 396. 7 eV and 73. 7 eV respectively by XPS analysis of the films with (100) orientation. The hardness measurements of A1N films indecate that the hardness values are fairly high and have no relation with the orientation of films.

关 键 词：对向靶溅射 薄膜 制备 X光衍射 氨化铝 物性 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]