额定压强下O_2/Ar比对ZnO:Al薄膜导电性能的影响  

Effects of O_2/Ar Ratio at Rated Pressure on Conductivity of Thin ZnO:Al Films

作　　者：邓雪然[1] 邓宏[1] 韦敏[1] 陈金菊[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《发光学报》2010年第2期227-229,共3页Chinese Journal of Luminescence

基　　金：国家自然科学基金(50802012)资助项目

摘　　要：采用射频磁控溅射法在石英玻璃基片上制备出ZnO:Al薄膜,并对薄膜在不同O2/Ar比状态下的沉积厚度、结晶性能和导电性能之间的关系进行了探讨。测试结果表明:在0.2Pa的额定压强下,Ar流量越大,薄膜的厚度越大,XRD峰越强,薄膜的电阻率(ρ)值越低。在纯氩气状态下溅射时,制得的薄膜具有最大的厚度值,约为2.06μm,并具有最强的XRD峰,ρ同时也达到最小值,阻值为2.66×10-4Ω.cm。研究表明:结晶性能的提高对薄膜ρ的降低起到了关键作用,而厚度的增加也会使电阻率下降。Thin ZnO：Al（AZO）films were prepared on the quartz substrates by using rf magnetron sputtering method,and the effects of O2/Ar ratio on the thickness,crystallization and conductivity of the thin films were investigated.Results shown that under a certain pressure,the films gain larger thickness and higher conductvity with increasing flow rate of Ar.The sample prepared in the pure Ar ambience can gain the lowest resistivity because of the high crystallization and large thickness.The thickness and resistivity is 2.06 μm and 2.66×10^-4 Ω·cm respectively.As shown by the results,we found that the high crystallization is the crucial factor for decreasing resistivity and the large thickness will decrease it as well.

关 键 词：射频磁控溅射 ZnO:Al(AZO)薄膜 O2/Ar比 导电性能 

分 类 号：O472.4[理学—半导体物理] O484.42[理学—物理]