低温CVD法在玻璃衬底上制备ZnO纳米线阵列  

Low-temperature Growth of ZnO Nanowire Array on Glass Substrate by Chemical Vapor Deposition

作　　者：夏文高[1] 陈金菊[1] 邓宏[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《发光学报》2010年第2期258-260,共3页Chinese Journal of Luminescence

基　　金：国家自然科学基金(50802012)资助项目

摘　　要：采用化学气相沉积(CVD)法在镀Cr(20nm)的玻璃衬底上,低温制备了ZnO纳米线阵列。利用扫描电子显微镜(SEM)和X射线衍射(XRD)对样品的表面形貌和微结构进行了分析表征。结果表明:源分解温度1350℃,衬底温度450～500℃,氩气流量为35sccm时,ZnO纳米线在玻璃衬底上呈现有序生长;XRD谱图中只观测到ZnO(002)衍射峰。表明制备的纳米线阵列具有高度c轴择优取向生长特性和较高的结晶质量。Well-aligned ZnO nanowire arrays were synthesized on Chromium （20 nm） coated glass substrates via chemical vapor deposition （CVD） method in a low temperature.The surface morphology and microstructure of products was characterized by scanning electron microscope （SEM） and X-ray diffraction （XRD）.Well-aligned ZnO nanowire arrays were prepared on glass in SEM images when the reaction temperature of source come up to 1 350 ℃,the substrate temperature maintains about 450～500 ℃,and the argon gas flow rate is 35 sccm.The presence of only （002） diffraction peak in the XRD patterns indicated that ZnO nanowire arrays exhibits c-axis preferred orientation and good crystal quality.

关 键 词：化学气相沉积 ZNO纳米线阵列 低温生长 

分 类 号：O484.1[理学—固体物理]